The evolution of DRAM technology towards WSI

Issues connected with the evolution of dynamic random-access memory (DRAM) technology towards wafer scale integration (WSI) are examined. It is pointed out that as one moves towards submicron technologies, fundamental physical, electrical, and processing limits are being encountered, and it is becoming clear that this trend cannot continue. This phenomenon is most clearly demonstrated by the development of DRAM technology. The costs to develop new fabrication lines are escalating to levels that require funding investments approaching national rather that corporate budgets. It is concluded that it is these factors which make WSI and related high-density interconnect technologies an inevitability if demands for higher levels of circuit integration are to continue to be satisfied into the nineties and beyond.<
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