Simulation study of the origin of the 2DEG in isolated Al/sub x/Ga/sub 1-x/N/GaN heterostructures

The significance of the surface states in isolated Al/sub x/Ga/sub 1-x/N/GaN heterostructures is investigated. A model based on a self-consistent solution of the Schrodinger, Poisson and charge balance equations is presented. The results obtained for the 2DEG density and the surface potential agree well with theoretical and experimental data already published (Jogai, 2002 and Smorchkova et al., 2001).