Noise temperature and diffusion coefficient associated with the quasi-two-dimensional electron gas in an ungated MODFET structure

The ac noise temperature and diffusion coefficient of the quasi-two-dimensional electron gas in an ungated AlGaAs/GaAs MODFET structure were measured as a function of electric field at T = 300 K. Noise temperture data can be used in the modeling of MODFET noise behavior. The diffusion coefficient of the two-dimensional (2-D) electron gas is found to be less field dependent than that of bulk GaAs.