On the storage time of InGaAs/InP bipolar transistors

The collector storage time was measured for InGaAs/InP bipolar transistors. For the evaluation, the transistors were driven into deep saturation choosing a test condition with no reverse base current. Devices comprising a homojunction- and a modified wide-gap-collector structure, respectively, were compared. For the latter device structure a marked reduction of the storage time by a factor of 10 was found.