An isolated MISS regenerative switching device

A new MISS switching device structure was designed and fabricated, which consists of Al/thin thermal oxide/p-n
⁺
-p-Si layers and is isolated by diffusing n-well to the buried n
⁺
layer. Furthermore, an N
⁺
-shield layer which confines the carrier flow to the MIS interface and a p
⁺
-gate which injects carriers in the n
⁺
-p junction were successfully implemented. The device reveals that switching and holding voltages V
s
and V
H
both decrease with increasing
A_{0x}
, and with decreasing
A_{J} and d_{0x}
. The fringing effect is minimized due to the isolated structure.