Temperature dependence of the Hooge parameter in n-channel Silicon JFET's

The Hooge noise parameter α
H
of n-channel Si-JFET's was measured as a function of temperature between 250 and 400 K. The data are in full agreement with an earlier heuristic quantum
1/f
noise expression introduced by van der Ziel et al. and based on Handel's quantum
1/f
noise theory.