Silicon Oxide enhanced Schottky gate In0.53Ga0.47As FET's with a self-aligned recessed gate structure

We present the fabrication and characterization of an In
0.53
Ga
0.47
As enhanced Schottky gate FET with a self-aligned recessed gate structure. A thin layer of e-beam evaporated silicon oxide was used to reduce the gate leakage current. For a n-channel doping of 8 × 10
¹⁶
cm
^-3
and a gate length of 1.5 µm, these devices showed good pinchoff characteristics with transconductances of 150 mS/mm. The effective velocity of electrons at current saturation is deduced to be 2.4 × 10
⁷
cm/s at the drain end of the gate. At 3 GHz these devices have a maximum available gain of 10 dB, decreasing to 6 dB at 6 GHz.