Degradation of refresh time in dynamic MOS RAM by irradiation of alpha particles

Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8.89 × 10
^-5
pA/alpha.