A new method for the two-dimensional calculation of the potential distribution in a buried-channel charge-coupled device: Theory and experimental verification

This paper describes a new method for calculating the potential distribution in the depleted top layer and in the substrate of a buried-channel charge-coupled (BCCD) device. The depletion approximation is used. The experimental verification of the method is done by comparing the results with measured values for the maximum channel potential Φ
MAX
, the location Y
m
of that maximum, and the location
H
of the edge of the p-n depletion layer into the substrate.