Transient charge and current distributions in the nitride of MNOS devices

Transient charge distributions in the nitride of MNOS devices at constant-current pulses have been computed using the pronounced detrapping model of Arnett. The results are compared with available analytical expressions for the limiting cases of small injected-charge levels and the steady state. Centroid versus charge content is computed and fitted by an analytical expression containing three parameters which are related to the electron range before trapping, the steady-state occupied-trap concentration at the oxide boundary, and the Frenkel-Poole coefficient. Charge outflow into the gate electrode is computed and used to obtain the apparent centroid as derived from the shift of flat-band voltage with injected charge.