GaAs impatt diodes with improved CW efficiency and noise performance

GaAs Schottky barrier Impatt diodes with nearly ideal I-V characteristics have been fabricated using nichrome as the barrier metal. The diodes were fabricated from epitaxial wafer structures grown by the vapor hydride process. The diodes were in the form of etched mesas with integral plated heat sinks or scribed mesas TC bonded to copper studs.