Complementary MOS—Bipolar transistor structure

Bipolar transistors can be used to increase the driving capabilities of complementary MOS transistors while retaining the low power dissipation feature. The fabrication of n-p-n bipolar transistors is compatible with the fabrication of the complementary MOS transistors in a monolithic structure. Common collector n-p-n transistors can be fabricated using a diffused n
⁺
source-drain region as emitter, a diffused p
^-
isolation region as base and an n
^-
substrate as collector with a h
fe
greater than 100. Lateral n-p-n transistors can be fabricated using a diffused n
⁺
source-drain region as emitter and collector, and p
^-
isolation region as base with a h
fe
greater than 10.