CW three-terminal GaAs oscillator

Three-terminal GaAs devices have oscillated coherently at frequencies between 60 MHz and 2500 MHz. Continuous power outputs at room temperature are generally less than 1 mW. Typical units are fabricated from GaAs p-n diodes by sawing into the n side with an 0.0005- or 0.001-inch tungsten wire to a depth close to the depletion region. The resultant device has an n contact on either side of the cut and one control contact on the p region. At a threshold bias field of approximately 4 kV/cm in the narrow neck between the sawcut and the depletion region, coherent microwave or submicrowave oscillations commence. The frequency of oscillation is primarily a function of external circuitry and device size, but can also be controlled by a bias applied to the p electrode.