Transport properties of pt nanowires fabricated by beam induced deposition

Technique of electron-beam (EB) or focused-ion-beam (FIB) induced deposition allows us to fabricate nanostructures at arbitrary positions on a substrate. This technique is applied to wiring, prototype device fabrication, mask repair, etc. We recently succeeded in fabricating field-emission electron sources using Pt nanostructures deposited by EB irradiation and characterized the emission properties{ 11. While applications of the beam induced process are thus intensively explored in many fields: there are few reports [2,3] on electron transport properties of the nanowires fabricated by the beam induced deposition. This paper describes fabrication and characterization of Pt nanowires and presents discussion on transport properties of the Pt nanowires fabricated by EB and FIB induced deposition.