Hot-carrier effects on interface-trap capture cross sections in MOSFETs as studied by charge pumping

A rapid charge-pumping method was used to measure the interface-trap parameters in MOSFETs. The geometric mean of the electron and hole interface-trap capture cross sections decreases significantly (as much as two orders of magnitude) after Fowler-Nordheim (F-N) injection, and gradually recovers toward its original value. This effect is consistent with the interface-trap transformation process observed in MOS capacitors.<
>