Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si/sub 1-x/Ge/sub x/ epitaxial layers

The characteristics of diodes fabricated in thick Si/sub 1-x/Ge/sub x/ layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocations in thick layers, a lower misfit dislocation density is found in small-area deposited regions. Similarly, diodes fabricated in small deposited regions have more ideal forward characteristics than diodes fabricated in large regions.<
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