Spectral responses of GaAs photodiodes fabricated by rapid thermal diffusion

The spectral responses of GaAs photodiodes fabricated by rapid thermal diffusion (RTD) of Zn are presented. The authors tried controlling the p/sup +/-n junction depth by the heating rate of RTD, without extending the diffusion time. It is found that Zn diffuses from the surface to a deeper position as the heating rate increases. Consequently, the spectral response of photodiodes formed by RTD is strongly dependent on the heating rate of RTD. A large improvement in the short-wavelength response between 400 and 800 nm is observed as the heating rate decreases.<
>