Absorption saturation intensity of InGaAs-InAlAs MQW under tensile and compressive strain

Optical absorption saturation intensity Is was measured by using femtosecond light pulse for In/sub x/Ga/sub 1-x/As-In/sub 0.52/Al/sub 0.48/As MQW grown on InP (100) substrates. Is showed minimum at x=0.46 (under tensile strain). This was in marked contrast to the previous results.