Proposal of new HfSiON CMOS fabrication process (HAMDAMA) for low standby power device

The authors propose a practical half-masked Damascene-like full silicidation (HAMDAMA) process to fabricate dual gate HfSiON CMOSFET in which poly-Si and fully silicided (FUSI) NiSi gates are used for n-FET and p-FET, respectively. Using this process, I/sub on/ in p-FET was improved by thinner T/sub eff/(inv) and higher hole mobility than the conventional poly-Si gate process.