New insights on the post-BD conduction of MOS devices at the nanoscale

We have combined standard electrical tests with conductive-atomic force microscopy experiments to investigate the conduction of MOS devices after the dielectric breakdown (BD) of the SiO/sub 2/ gate oxide. In particular, the influence of the conduction nanometer scale parameters on the overall device post-BD current-voltage characteristics has been analyzed. The results show a nonuniform conductivity of the oxide at the BD area and that the total current flowing through the device is mainly driven by a very small fraction of that region.