State-space modeling of the PIN photodetector

A state-space modeling for metal-semiconductor-metal (MSM) or p-intrinsic-n (PIN) photodetectors is developed. This method of analysis gives the time and frequency domain response of the detector for any form of light excitation including end, uniform and exponential illumination. Both the transit time limitation and the device/circuit RC time constant are included in the model. The authors compare the calculations with previously reported analytical results, and good agreement is found.<
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