Light emission and TRE for a 120 nm technology case study: how much wavelength shift?

After a brief review of light emission in field effect transistors, we extract some electrical and physical parameters linked to the emission of photons such as V/sub DD/ and channel length. Using 120 nm technology structures (nMOS, pMOS, inverters, etc.) we compare emissions with the following detectors: CCD, MCT for static emission, PICA, SiAPD and SSPD for time resolved photon emission (TRE). Results are interpreted according to the quantum efficiency of detectors as a function of wavelength. Finally, the wavelength shift is addressed by confronting practical results with earlier publications on light emission spectra.