High density, low on-resistance, high side N-channel trench lateral power MOSFET with thick copper metal

We proposed a low side N-channel trench lateral power MOSFET (TLPM) in (N.Fujishima et al, Proc. of IEDM 2002, p.455-458). In this paper, a high side N-channel TLPM, which is isolated from the substrate, is proposed, fabricated and characterized for the first time. The fabricated high side TLPM devices exhibit a specific on-resistance of 17 m/spl Omega/-mm/sup 2/ with a breakdown voltage of 21 V.