A semi-empirical model of the MOSFET's small-signal drain conductance in saturation for analog circuit design

A semiempirical model for the incremental drain conductance g/sub d/ of the long-channel MOSFET in saturation which is useful for hand analysis of MOS amplifiers is presented. The model's accuracy is higher than that of current commercial simulators and comparable to the parameter spread observed in current VLSI processes. Important modeling errors in the standard SPICE model for g/sub d/ are pointed out.<
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