Low-drive voltage intersectional waveguide optical switch using GaInAs/InP MQW structure

A low-drive voltage intersectional waveguide optical switch using 1.6 mu m GaInAs/InP MQW (multiple quantum well) structure, which was fabricated by only one-step epitaxial growth of MQW structure followed by a one-step pattern etching of the waveguide is demonstrated. Extinction ratio at the straight port of 9.9 dB and that at the reflection port of 4.4 dB were obtained at an applied voltage of -4 V.<
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