Realization of high-efficiency 10 GHz bandwidth silicon photodetector arrays for fully integrated optical data communication interfaces

We present a commercially reproducible fabrication technique for producing high quantum efficiency photodiodes with up to 10 GHz bandwidth on double silicon-on-insulator (SOI) wafers. The substrate consists of a two-period distributed Bragg reflector (DBR), which provides a 90% reflecting surface. Resonant-cavity-enhanced (RCE) Si photodetectors with 40% quantum efficiency at 860 nm and a FWHM of 29 ps suitable for 10 Gbps data communications are demonstrated We also demonstrate integrated photodiode arrays in silicon substrate for multi-channel high speed serial interfaces.