Spectroscopic studies of GaN:Er, GaN:Eu, and GaN/AlGaN:Tm prepared by solid-source molecular beam epitaxy

In this paper, we report on recent studies of the photoluminescence (PL) properties of GaN:Er, GaN:Eu, and GaN/AlGaN:Tm thin films prepared by solid-source molecular beam epitaxy. The most intense visible PL is observed from GaN:Eu (red: 622 nm) followed by GaN:Er (green: 537 nm, 558 nm), and then GaN:Tm (blue: 479 nm).