RTP of titanium boride for applications in front end processing

Titanium boride is used here for contact formation in scaled down devices. Properties of deposited films show strong dependence on electron beam deposition and annealing conditions. Thin TiB/sub 2/ films show stable composition in high temperature RTP. Ohmic contacts are formed on p type silicon both by using as deposited and annealed layers. On n-type Si, large thermal budget processes result in dopant outdiffusion and formation of junctions significantly more shallow than in implantation. Recrystallization of TiB/sub 2/, observed after high temperature annealing, depends on films deposition conditions and interface perfection. Material characterization techniques including RBS, XPS, SIMS, and TEM are used to explain results of electrical measurement of test structures.