Comparative performance limits of MOSFET, MESFET and MODFET digital circuits

Using the static transfer curves derived from analytical drain current and threshold voltage models for short-channel MOSFETs, MESFETs and MODFETs, the FET scaling limits in CMOS and E/D MOSFET (NMOS), MESFET, and MODFET DCFL digital circuits are determined as 0.025 mu m, 0.05 mu m, 0.075 mu m, and 0.075 mu m (respectively) from noise margin considerations. The corresponding delay times of ring oscillators using these minimum length devices are shown to be 6.37 ps, 5.07 ps. 2.44 ps and 2.61 ps, respectively.<
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