Thermal annealing of trapped holes in SIMOX buried oxides

The thermal detrapping of radiation-generated trapped holes in SIMOX (separation by implantation of oxygen) buried oxides has been investigated with an isothermal anneal experiment. Recovery from the radiation damage exhibits Arrhenius behavior; the recovery times vary exponentially as a function of inverse temperature. Activation energies range from about 0.45 to 1.65 eV, indicating probable thermal detrapping of holes from a broad distribution in hole trap depths. The high activation energies are an indication that some of the holes are deeply trapped in the oxide.<
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