Low temperature development of PMMA for sub-10-nm electron beam lithography

We investigate PMMA development at lowered temperatures for its effect on the resolution, PMMA trench cleanliness and pattern quality of sub-10 nm e-beam lithography. We find that low temperature development (4/spl sim/10 deg. C) results in reproducibly 4/spl sim/8 nm PMMA trenches and fabrication of single-particle-width Au nano-particle lines by liftoff. We discuss development temperature and other key factors for formation of better quality PMMA trenches at the sub-10 nm scale.