130 nm process technology integration of advanced Cu/CVD low k dielectric material-case study of failure analysis and yield enhancement

We reported the failure analysis of 130 nm Cu/CVD low k film back-end-of-line (BEOL) process and successfully identified the root causes of failures leading to electrical yield loss of the process. We also demonstrated the significant yield enhancements through a) optimization of via & trench etch recipes and post-etch clean condition, b) tightened defectivity control and c) in-line monitoring control.