InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy

In the case of InGaAlAs selective-area growth (SAG), when the aluminum content is high (Al: 0.48), flatness at the mask edge degrades and compositional change in the selective region increases. On the other hand, when the aluminum content is low (Al: 0.16), a flat growth plane is formed and no spike growth at the mask edge appears. Moreover, for a multiple-quantum-well structure, the PL peak intensity in the selective region is similar to that in the non-selective region.