High wavelength selective p-i-n photodiodes using cost-effective one step growth technique of double filter layers for a 1.3/1.55 /spl mu/m bi-directional transceiver

High wavelength selective 1.55 /spl mu/m-photodiodes with double In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ filter layers (DF-PD) have been developed using a novel epitaxial growth technique in which the front-side and the back-side filter layers were simultaneously grown on a InP substrate. Thick filter layers over 6 /spl mu/m can be grown using this technique, which is needed in order to improve the wavelength selectivity. Thickness and carrier concentration of the filter layer were optimized under the theoretical consideration on carrier recombination process, which was induced by absorbed 1.3 /spl mu/m noise light. High wavelength selectivity such as 27 dB has been obtained, which was a 5 dB improvement compared to the conventional DF-PD.