E-beam pumped GaInP/AlGaInP MQW VCSEL

A 17-period Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.7/Ga/sub 0.3/)/sub 0.5/In/sub 0.5/P quantum well structure was grown by metalorganic vapor phase epitaxy on a GaAs substrate misoriented by 10/spl deg/ from [001] to [111]A. A microcavity with dielectric oxide mirrors was fabricated on the basis of this structure. Lasing at 619 nm with 0.7 W output power was achieved under scanning electron beam longitudinal pumping at room temperature. It is shown that low threshold lasing requires the position of the QWs to coincide with the antinodes of the cavity mode, at the maximum of the gain spectrum due to the QW ground state.