Electromigration simulation in Cu-low-K multilevel interconnect segments

We present a physically based simulation model of electromigration (EM) induced failure development. Transient, 3-D, fully linked multiphysics simulation scheme has been developed on the basis of the proposed model. Simulations have been done on the realistic interconnect structures. Obtained simulation results have been found to fit well to available experimental data regarding the location of void nucleation sites and grow kinetics.