Low-frequency noise characteristics in SiGe channel heterostructure dynamic threshold pMOSFET (HDTMOS)

We present the first investigation of low frequency noise in the SiGe channel heterostructure dynamic threshold p-MOSFET (HDTMOS). The sub-threshold characteristics and drain current noise were measured and evaluated. The input referred noise of the SiGe HDTMOS was reduced to about one-tenth compared with that of the Si MOS, because of higher transconductance g/sub m/ and less interface states at the Si/SiGe hetero-interface.