Selfconsistent model for pseudomorphic MOSFETs

A self-consistent charge control and current-voltage (I-V) characteristics are presented for a pseudomorphic MODFET (AlGaAs/InGaAs/AlGaAs). Poisson's and Schrodinger's equations are solved self-consistently to calculate the areal charge distribution n/sub s/ in the quantum well (QW). For simplicity, the QW formed in InGaAs is approximated by three straight lines. The gate voltage dependence of the two-dimensional electron gas gives the charged control expression.<
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