Modelling the epitaxial growth process of gallium arsenide

A molecular dynamic model of epitaxial growth on gallium arsenide is presented. The results from the molecular dynamics model are used to obtain parametric growth data including layer thickness and doping concentration. Initially, it was necessary to check the potential, which was developed for bulk gallium arsenide, for its applicability to surface growth. The resultant continuum model, when integrated with Stanford University's SUPREM 3.5 code, can simulate gallium arsenide processing based on epitaxial material.<
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