23-GHz Band GaAs MESFET Reflection-Type Amplifier

A new method is presented for applying a packaged GaAS MESFET to an amplifier in the frequency region above 20 GHz, using package resonance as a positive feedback element and operating GaAs MESFET as a negative resistance two-terminal device in a reflection-type amplifier. Experimentally, a 6-dB noise figure in the 23-GHz band and a 8-dB noise figure in the 27-GHz band have been achieved.