Structural and electrical properties of furnace and rapid thermally annealed LPCVD WSi/sub 2/ films on single-crystal, polycrystalline, and amorphous silicon substrates

Alternate approaches to obtain low-resistance, low-pressure chemical vapor deposition (LPCVD) WSi/sub 2/ films for application as interconnections in silicon integrated circuit technologies were investigated. The silicide films were deposited on three different substrates and annealed in two different systems. The silicide films deposited on the doped substrates as well as films doped using ion implantation were analyzed. The silicide microstructure, electrical film conductivity, and dopant redistribution were studied as a function of the process variants. An optimum set of annealing conditions were identified that resulted in excellent silicide thin-film properties. A correlation between the material and electrical properties is provided using the experimental data.<
>