An analysis of positive and negative resistance characteristics in the high-current-density region of Schottky diodes

A number of different diode characteristics are observed in small-area silicon Schottky diodes under forward-biased and high-current-density conditions. These characteristics, such as positive resistance, negative resistance, and normal diode characteristics, are analyzed. The analysis demonstrates that the variations are due to the minority-carrier accumulation in the epitaxial region of the diodes, which is mainly controlled by Schottky barrier heights and the resistivity of the semiconductor epitaxial region.<
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