Threshold current density in solution-grown GaAs laser diodes

Threshold current density of solution-grown GaAs laser diodes with a Fabry-Perot cavity were measured at 77 and 300°K by varying the acceptor concentration in the
p
region N
a
. Threshold current density was lower in the series of diodes with larger values of N
a
than in the series of diodes with smaller values of N
a
for the diode length between 0.1 and 1 mm. Through these experiments diodes with the threshold current density as low as
3 \times10^{2}
A/cm
²
at 77°K and
2.8 \times 10^{4}
A/cm
²
at 300°K for the diode length of 1 mm, and as low as 10
³
A/cm
²
at 77°K and
4.5 \times 10^{4}
A/cm
²
at 300°K for the diode length of 0.1 mm were obtained.