InAs-based quantum cascade light emitting structures containing a double plasmon waveguide

Type-II InAs/GaSb/AlSb intersubband light emitters have a great potential over the type-I intersubband emitters because of its unique InAs/GaSb broken gap, the large optical gain and long optical phonon non-radiative relaxation time expected from the small effective mass of InAs quantum well (QW). Here we describe molecular epitaxy growth of InAs-based quantum cascade (QC) structures containing a double plasmon waveguide and its emission properties.