Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications

We report the wideband performance of uniform Type-II GaInAsSb/InP UTC-PDs for optical data communications near 300 Gbps. A wide bandwidth of
$>$
110 GHz is achieved for a device area of 50
$\mu$
m
$^{2}$
. In signal transmission measurements, the present UTC-PDs show a low Bit-Error Rate (BER) and a high Signal-to-Noise Ratio (SNR) of more than 18 dB at data rates as high as 288 Gbps (96 GBd, PAM-8) without post-amplification electronics. The work demonstrates the suitability of GaInAsSb/InP UTC-PDs for optical data transmission at bit rates approaching 300 Gbps.