Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors

The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power and standard-nMOS diodes. The implementation of different ground planes and substrate biases is analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents for both systems with the nMOS devices’ substrate biased at −2 V. The standard-nMOS shows a reduced leakage current and increased ratio between the on and off-state currents with the substrate bias at −2 V and with a P-type ground plane implemented while the Ultra-Low-Power presents only a significative influence of the ground planes on the ratio between the on and off-state currents. The ground planes do not provoke a significant change in the leakage current, but a noticeable variation can be observed in the ratio between the on and off-state currents due to the higher threshold voltage in relation to the system without ground plane.