An RF CMOS modified-cascode LNA with inductive source degeneration

An RF CMOS low-noise amplifier (LNA) is proposed using modified-cascode topology to reduce the voltage supply and consequently the power dissipation. The circuit was simulated and designed for 0.5 /spl mu/m CMOS MOSIS process. At 1 GHz, the LNA noise figure (NF) is 1.62 dB, forward gain is 18.6 dB and reverse isolation is -45.5 dB. The LNA consumes 12.5 mW from a 1 V power supply.