Conductivity modulation improvement in 6.5 kV trench UMOS insulated gate bipolar transistors

A low forward-drop insulated gate bipolar transistor with trench UMOS structure and blocking capability of 6.5 kV is described. The effect of various design parameters on conductivity modulation in UMOS IGBTs and the potential for higher switching efficiency through the adjustment of the excess carrier profile during forward conduction is analyzed. Results based on numerical simulation of the forward conduction, forward blocking, FBSOA and RBSOA characteristics of 6.5 kV UMOS and DMOS IGBTs in the stripe and circular cell-geometries are presented and compared.