Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs

By optimizing the inductively coupled plasma (ICP) oxidation condition, a thin oxide of 10 nm has been grown at 350/spl deg/C to achieve excellent gate oxide integrity of low leakage current<5×10/sup -8/ A/cm
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(at 8 MV/cm), high breakdown field of 9.3 MV/cm and low interface trap density of 1.5×10/sup 11/ /eV cm
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. The superior performance poly-Si TFTs using such a thin ICP oxide were attained to achieve a high ON current of 110 μA/μm at V/sub D/=1 V and V/sub G/=5 V and the high electron field effect mobility of 231 cm
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/V/spl middot/S.