A modified DSOI (Drain/Source On Insulator) device structure with better electrical performance

A new device structure called DSOI (Drain/Source On Insulator) is proposed to alleviate the thermal transfer problem and floating body effects in SOI (Silicon on Insulator) device. The purpose of present work is to modify DSOI structure to get the best device electrical capability. We focus on the location of buried oxidation. And simulation results approve that this modified structure having better electrical performance than prototype.